纳米结构锗在 300-1600 nm 波长处的吸收率 > 99 % Toni P. Pasanen*、Joonas Isometsä、Moises Garin、Kexun Chen、Ville Vähänissi 和 Hele Savin Toni P. Pasanen 博士、Joonas Isometsä、Kexun Chen 博士、Ville Vähänissi 博士、Hele Savin Aalto 教授University, Department of Electronics and Nanoengineering, Tietotie 3, 02150 Espoo,Finland E-mail: toni.pasanen@aalto.fi Dr. Moises Garin Aalto University, Department of Electronics and Nanoengineering, Tietotie 3, 02150 Espoo,Finland Universitat de Vic – Universitat Central de Catalunya, Department of Engineering, c/ de la Laura 13, 08500 Vic, 西班牙大学Politècnica de Catalunya, Gran Capità s/n, 08034 巴塞罗那, 西班牙 关键词:锗、纳米结构、干法蚀刻、传感器、近红外
•尼克·比雷尔(Nick Birrell),甲骨文能源和水•乔纳森·罗德里格斯(Jonathan Rodriguez),橙色和罗克兰公用事业公司(Rockland Utilities,Inc。Illinois Power Agency • John-Michael Cross, Minnesota Department of Commerce • Alex Pasanen, Solstice • Sawyer Morgan, New Jersey Board of Public Utilities • Greg Leventis, Lawrence Berkley National Laboratory • Kaifeng Xu, National Renewable Energy Laboratory • Kimberly Shields, U.S. Department of Energy • Jeremy J. Roberts, Green Button Alliance • Susannah Shoemaker, National可再生能源实验室•克里斯蒂娜·努涅斯(Christina Nunez),国家可再生能源实验室•萨拉秋季,国家可再生能源实验室。