栅极金属氧化物半导体异质结构场效应晶体管 (DG MOS-HFET)”,超晶格和微结构 - ELSEVIER Publishers,第 55 卷,第 8-15 页,2013 年。ISSN:0749-6036,DOI:10.1016/j.spmi.2012.12.002(SCI 影响因子 2.12)3. Sudhansu Kumar Pati、KalyanKoley、ArkaDutta、N. Mohankumar 和 Chandan Kumar Sarkar,“一种提取具有 NQS 效应的非对称 DG MOSFET 的 RF 参数的新方法”,半导体杂志- IOP Publishers,第 55 卷34,第 2 期,第 1-5 页,2013 年 11 月。ISSN:1674-4926,DOI:10.1088/1674-4926/34/11/114002(SCI - 影响因子 1.18)4. Sudhansu Kumar Pati、KalyanKoley、ArkaDutta、N. Mohankumar 和 Chandan Kumar Sarkar,“体和氧化物厚度变化对下重叠 DG- MOSFET 模拟和 RF 性能的影响研究”,Microelectronics Reliability-Elsevier Publishers,Vol. 54,第 6-7 期,第 1137-1142 页,2014 年。ISSN:0026-2714,DOI:10.1016/j.microrel.2014.02.008 5. HemantPardeshi、Sudhansu Kumar Pati、Godwin Raj、N. Mohankumar 和 Chandan Kumar Sarkar,“欠重叠和栅极长度对 AlInN/GaN 欠重叠 MOSFET 器件性能的影响”,半导体杂志,IOP Science publishers,第 54 卷。 33, No. 12, 2012 年,第 1-7 页。ISSN:1674-4926,DOI:10.1088/1674- 4926/33/12/124001(SCI-影响因子 1.18) 6. HemantPardeshi、Sudhansu Kumar Pati、Godwin Raj、N. Mohankumar 和 Chandan Kumar Sarkar,“研究 III-V 异质结构欠重叠 DG MOSFET 中栅极错位、栅极偏置和欠重叠长度导致的不对称效应”,Physica E:低维系统和纳米结构,Elsevier,Vol. 46,第 61-67 页,2012 年。ISSN:1386-9477,DOI:10.1016/j.physe.2012.09.011(SCI 影响因子 3.57) 7. HemantPardeshi、Godwin Raj、Sudhansu Kumar Pati、N. Mohankumar 和 Chandan Kumar Sarkar,“III-V 异质结构与硅底搭接双栅极 MOSFET 的比较评估”,半导体,Springer,第 46 卷。 46,第 10 期,2012 年,第 1299–1303 页。ISSN:1090-6479,DOI:10.1134/S1063782612100119(SCI - 影响因子 0.641) 8. Godwin Raj、HemantPardeshi、Sudhansu Kumar Pati、N. Mohankumar 和 Chandan Kumar Sarkar,“基于物理的 AlGaN/GaN HEMT 器件电荷和漏极电流模型”,Journal of Electron Devices,Vol. 14,第 1155-1160 页,2012 年。ISSN:1682-3427 9. Godwin Raj、HemantPardeshi、Sudhansu Kumar Pati、N. Mohankumar 和 Chandan Kumar Sarkar,“基于极化的电荷密度漏极电流和纳米级 AlInGaN/AlN/GaN HEMT 器件的小信号模型”,超晶格和微结构,Elsevier,Vol. 54,第 188-203 页,2013 年。ISSN:0749-6036,DOI:10.1016/j.spmi.2012.11.020(SCI 影响因子 2.12) 10. HemantPardeshi、Godwin Raj、Sudhansu Kumar Pati、N. Mohankumar 和 Chandan Kumar Sarkar,“势垒厚度对 AlInN/GaN 下重叠 DG MOSFET 器件性能的影响”,超晶格与微结构,Elsevier,第 60 卷,第 47-59 页,2013 年。ISSN:0749-6036,DOI:10.1016/j.spmi.2013.04.015(SCI 影响因子 2.12)
该调查受益于多位官员和专家的评论和意见,特别是 BVR Subrahmanyam、Amrit Lal Meena、Amit Yadav、Anant Swarup、Amitabha Pradhan、Dr. M. Angamuthu、Gaurav Masaldan、Dr. C. Vanlalramsanga、Ishtiyaque Ahmed、Renu Lata、Rishika Choraria、Dr. Mridul Saggar、Rajiv Jain、Soumasree Tewari、Deepika Rawat、Sukhbir Singh、Yashwant Sigh、JP Singh、Jitender Sokal、Ranjeev、Samir Kumar、Dhrijesh Kumar Tiwari、Suman Patel、Dr Veena Dhawan、Dr Suhas Dhandore、V Dhanya、Saksham Sood、Bhanu Pratap Singh、Sanjay Kumar Singh、Dalip Kumar、Dinesh Kapila、Amit Shreeansh、Jasvinder Singh、Naresh Pal Gangwar、Neelesh Kumar Sah、Arun Kumar、Rajasree Ray、Sonamani Haobam、Dr.乌玛娜·萨兰吉博士Subrata Bose, Priti Singh, Sanyukta Samaddar, Shishir Seth, Kamal Kishore, Mona Chhabra Anand, Ashok Kumar, Abhay Bakre, Rajiv Ranjan Mishra, Binod Kumar, Sharmi Palit, RK Sinha, Dr Nandakumaran P, Kamal Pandey, Brij Raj, Amit Kumar, Ishita Sharma, Pawan Chowdhary, Vishal Pratap Singh, Kusum Mishra, Aditya Kumar Ghosh, Rupa Dutta, Sudhansu Sekhar Das, Aparna S. Sharma, Awadhesh Kumar Choudhary, Animesh Bharti, Ajith Kumar N, Sanjoy Roy, Sujoy Mitra, J. Rajesh Kumar, Padmakumar Sankaran Nair, Jithesh John, Gorityala Veer Mahendar, Alok Chandra, Preeti Nath, Arvind Chaudhary, Gaurav Kumar, Shakil Alam, Rajib Kumar Sen, Nandita Mishra, Ashwini Kumar, Anshuman Mohanty, Usha Suresh, Piyush Srivastava, Simmi Chaudhary, Arun Kumar, Kuntal Sensarma, Vishal Kapadia, Sunil Kumar Garg, GS Panwar、HK Hajong、Medha Shekar、Sushanta Kumar Das、Kuldip Narayan、Peeyush Kumar、Baldeo Purushartha、Ajit Ratnakar Joshi、NK Santoshi、Deepak Singh、Kalpana Dhawan、Subhash Chand、Naveen Sirohi、Arpit Bhargava、Arzoo Arora、Rohan Verma、Ram Singh。