然而,在光电设备中,PB对应物的高性能,最近的努力,尤其是在CS 2 Agbibr 6双PSK上,[2]证明了它们在太阳能电池的广泛应用中的强大用途,[3-9] [3-9]光探测器,[10,11] x射线检测器,[10,11] X射线检测器[12] memristors [13] Memristors [13] 13]。[14] Moreover, when passing from the 3D double PSK toward its layered counterparts with two (2L) or one (1L) octahedra layers by introducing large A-site organic cations, such as butylam- monium (BA) or propylammonium (PA), allowed to develop new two-dimensional (2D) materials with tunable optoelec- tronic properties, such as the character of the bandgap as well as带隙的能量从≈2eV到≈3eV,这与无机晶格的失真有关。[15–19]尺寸还原也明显提高了候选人的ON/OFF比率,从10 2(CS 2 Ag-Birb 6至3d)到10 7(((Ba)2 Csagbibr 7),因为在扭曲的晶体结构中,离子迁移受到离子迁移的青睐。[20]从(Ba)2 Csagbibr 7中获得了具有较大迁移率的产物的X射线光绘制器,其中敏感性取决于晶体的尺寸(八面体层的数量)。[21,22]光电探测器的时间响应可以通过尺寸减小来增强,同时保持相似的检测率; [23]