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自由掺杂 La 的 HfO2 铁电体用于负电容
用于负电容场效应晶体管的缺氧无唤醒 La 掺杂 HfO2 铁电体的水性制备方法 / Pujar, Pavan；Cho, Haewon；Kim, Young-Hoon；Zagni, Nicolo；Oh, Jeonghyeon；Lee, Eunha；Gandla, Srinivas；Nukala, Pavan；Kim, Young-Min；Alam, Muhammad Ashraful；Kim, Sunkook。- 收录于：ACS NANO。- ISSN 1936-0851。- 17:19(2023)，第 19076-19086 页。[10.1021/acsnano.3c04983]
UCSB计算机科学研究生手册2023-24
Francesco Bullo, Mechanical Engineering, bullo@engineering.ucsb.edu Katie Byl, Electrical and Computer Engineering, katiebyl@ucsb.edu Shivkumar Chandrasekaran, Electrical and Computer Engineering, shiv@ece.ucsb.edu Miguel Eckstein, Psychological and Brain Sciences, miguel.eckstein@psych.ucsb.edu詹妮弗·雅各布斯（Jennifer Jacobs），媒体艺术与技术，jmjacobs@ucsb.edu haewon jeong，电气和计算机工程，haewon@ece.ucsb.edu b.s.Manjunath, Electrical and Computer Engineering, manj@ece.ucsb.edu Kyle Mahowald, Linguistics, mahowald@ucsb.edu Nina Miolane, Electrical and Computer Engineering, ninamiolane@ucsb.edu Yasamin C. Mostofi, Electrical and Computer Engineering, ymostofi@ece.ucsb.edu Yao Qin, Electrical and Computer工程，yaoqin@ucsb.edu pradeep sen，电气和计算机工程，psen@ece.ucsb.ucsb.edu sharon tettegah，黑色研究，stettegah@ucsb.edu simon simon todd，语言学，sjtodd@ucsb.edu;