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Difficult to grow III-V on Si with high crystal quality due to mismatch in lattice constant & thermal expansion coefficient (CTE), and polarity Lattice constant mismatch: Crystal configuration (atom spacing) is different and higher for most of III-V compounds than Si CTE: Si and III-V compounds expand/contract differently Polarity: Si is non-polar, while III-V is polar
iii-V光电探测器单拼合地整合在硅互连应用上
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