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• High power capability of 40 W • Proprietary processing technique produces extremely low resistance values from 15 µΩ to 100 µΩ • Dual element eliminates need for multiple shunts • Extremely robust welded terminal to element construction • Solid metal nickel-chrome alloy resistive element with patent pending design for low TCR (< 5 ppm/°C) • Very low inductance (< 5 nH) • Low thermal EMF (as low AS <0.8μV/°C）•AEC-Q200合格
新的WSBR双元素分流，具有TCR免疫的ASIL-D安全标准
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